BAS40_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Schottky Barrier Diodes

Elektronische Bauelemente
BAS40/-04/-05/-06
Surface Mount Schottky Barrier Diodes
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Low Turn-on Voltage
z Low Forward Voltage
z Very Low Capacitance
Less Than 5.0pF @ 0V
z For high speed switching application,
circuit protection
MECHANICAL DATA
z Case: SOT-23, Molded Plastic
z Terminals: Solderable per MIL-STD-202,
Method 208
z Polarity: See Diagrams Below
z Weight: 0.008 grams (approx.)
z Mounting Position: Any
1
Base
3 ^Collector
2
Emitter
A
L
K
3
Top View
BS
1
2
V
G
D
J
C
H
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
3
3
3
3
1
2
BAS40 Marking: 43
1
2
BAS40-04 Marking: 44
1
2
BAS40-05 Marking: 45
1
2
BAS40-06 Marking: 46
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Reverse Voltage
Forward Continuous Current
Single Forward Current, t≦10 ms
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
Junction, Storage Temperature
Symbol
V_R
I_F
I_FSM
R_θJA
P_F
T_J, T_STG
Ratings
40
200
600
508
311
325
1.8
-55 ~ +150
Unit
V
mA
mA
°C/W
mW
mW / °C
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Symbol
Min.
Max.
Unit
Reverse Breakdown Voltage
V_(BR)R
40
-
V
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
I_R
-
200
nA
V_F1
-
380
mV
V_F2
-
1000
mV
C_TOT
-
5.0
pF
t_RR
-
5
nS
Test Conditions
I_R = 10 μA
V_R = 30V
I_F = 1mA
I_F = 40mA
V_R = 0, f=1MHz
I_RR = 1 mA, I_R=I_F=10mA, R_L=100Ω
http://www.SeCoSGmbH.com
22-Sept-2008 Rev.C
Any changes of specification will not be informed individually.
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