BAS40W_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Schottky Barrier Diodes

Elektronische Bauelemente
BAS40W/BAS40-04W/
BAS40-05W/BAS40-06W
Surface Mount Schottky Barrier Diodes
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low Turn-on Voltage
A
L
 Low Forward Voltage
 Very Low Capacitance
Less Than 5.0pF @ 0V
Top View
BS
 For high speed switching application, circuit protection _V
G
MECHANICAL DATA
 Case: SOT-323, Molded Plastic
 Terminals: Solderable per MIL-STD-202,
Method 208
 Polarity: See Diagrams Below
 Weight: 0.006 grams (approx.)
 Mounting Position: Any
D
3
1
2
C
H
K
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
J
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
3
3
3
3
1
2
BAS40W Marking: 43
1
2
BAS40-04W Marking: 44
1
2
BAS40-05W Marking: 45
1
2
BAS40-06W Marking: 46
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Reverse Voltage
Forward Continuous Current
Single Forward Current, t≦10 ms
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
Junction, Storage Temperature
Symbol
V_R
I_F
I_FSM
R_JA
P_F
T_J, T_STG
Ratings
40
200
600
508
311
325
1.8
-55 ~ +150
Unit
V
mA
mA
°C/W
mW
mW / °C
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Symbol
Min.
Max.
Unit
Reverse Breakdown Voltage
V_(BR)R
40
-
V
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
I_R
-
200
nA
V_F1
-
380
mV
V_F2
-
1000
mV
C_TOT
-
5.0
pF
t_RR
-
5
nS
Test Conditions
I_R = 10 A
V_R = 30V
I_F = 1mA
I_F = 40mA
V_R = 0, f=1MHz
I_RR = 1 mA, I_R=I_F=10mA, R_L=100
http://www.SeCoSGmbH.com/
22-Sept-2008 Rev.C
Any changes of specification will not be informed individually.
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