BAS40WS Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY DIODE

Elektronische Bauelemente
BAS40WS
Surface Mount Schottky Barrier Diodes
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Low Turn-on Voltage
z Fast Switching
z PN Junction Guard for Transient and ESD Protection
z Designed for Surface Mount Application
z Plastic Material –UL Recognition Flammability
Classification 94V-O
MARKING
43
SOD-323
D
1
Cathode Band
H
G
2
F
C
B
A
E
REF.
A
B
C
D
J
Millimeter
Min. Max.
1.05 REF.
0.20 REF.
0.80 1.00
0.25 0.40
REF.
E
F
G
H
Millimeter
Min. Max.
0.080 0.180
1.15 1.45
1.60 1.80
2.30 2.70
ABSOLUTE MAXIMUM RATINGS (Single diode, at Ta = 25°C unless otherwise specified)
Parameter
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Peak Forward Surge Current, t≦1.0 s
Thermal Resistance Junction−to−Ambient
Power Dissipation
Junction, Storage Temperature
Symbol
V_RRM
V_RWM
V_R
I_F
I_FSM
R_θJA
P_D
T_J, T_STG
Ratings
40
200
600
625
200
-55 ~ +150
Unit
V
mA
mA
°C/W
mW
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Reverse Current
Forward Voltage
Diode Capacitance between
Terminals
Symbol
V_(BR)R
I_R
V_F1
V_F2
V_F3
C_T
Min.
40
-
-
-
-
-
Typ.
-
20
-
-
-
4.0
Max.
-
200
380
500
1000
Unit
Test Conditions
V I_R = 10 μA
nA V_R = 30V
mV I_F = 1mA
mV I_F = 10mA
mV I_F = 40mA
5.0
pF V_R = 0, f=1MHz
Reverse Recovery Time
t_RR
-
5
nS I_RR = 0.1XI_R, I_R=I_F=10mA, R_L=100Ω
http://www.SeCoSGmbH.com/
01-August-2009 Rev. A
Any changes of specification will not be informed individually.
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