BAS40W Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

Elektronische Bauelemente
BAS40/-04W/-05W/-06W
Surface Mount Schottky Barrier Diodes
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
A
z Low Turn-on Voltage
L
z Low Forward Voltage
z Very Low Capacitance
Top View
BS
Less Than 5.0pF @ 0V
z For high speed switching application, circuit protection _V
G
MECHANICAL DATA
z Case: SOT-323, Molded Plastic
z Terminals: Solderable per MIL-STD-202,
Method 208
z Polarity: See Diagrams Below
z Weight: 0.006 grams (approx.)
z Mounting Position: Any
D
3
1
2
C
H
K
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
J
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
3
3
3
3
1
2
BAS40W Marking: 43
1
2
BAS40-04W Marking: 44
1
2
BAS40-05W Marking: 45
1
2
BAS40-06W Marking: 46
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Reverse Voltage
Forward Continuous Current
Single Forward Current, t≦10 ms
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
Junction, Storage Temperature
Symbol
V_R
I_F
I_FSM
R_θJA
P_F
T_J, T_STG
Ratings
40
200
600
508
311
325
1.8
-55 ~ +150
Unit
V
mA
mA
°C/W
mW
mW / °C
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Symbol
Min.
Max.
Unit
Reverse Breakdown Voltage
V_(BR)R
40
-
V
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
I_R
-
200
nA
V_F1
-
380
mV
V_F2
-
1000
mV
C_TOT
-
5.0
pF
t_RR
-
5
nS
Test Conditions
I_R = 10 μA
V_R = 30V
I_F = 1mA
I_F = 40mA
V_R = 0, f=1MHz
I_RR = 1 mA, I_R=I_F=10mA, R_L=100Ω
http://www.SeCoSGmbH.com/
22-Sept-2008 Rev.C
Any changes of specification will not be informed individually.
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