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| BAS21H Datasheet, PDF (1/2 Pages) NXP Semiconductors – Single high-voltage switching diode in small SOD123F package | |||
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Elektronische Bauelemente
BAS21H
Surface Mount Switching Diode
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
z Fast Switching Speed
z Surface Mount Package Ideally Suited for automatic Insertion
z For General Purpose Switching Applications
SOD-323
D
1
Cathode Band
H
G
2
F
MARKING: T3
ABSOLUTE MAXIMUM RATINGS (Single diode @ TA = 25°C)
Parameter
Symbol
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
VR
IF
IFM(Surge)
C
B
A
E
REF.
A
B
C
D
J
Millimeter
Min. Max.
1.05 REF.
0.20 REF.
0.80 1.00
0.25 0.40
REF.
E
F
G
H
Millimeter
Min. Max.
0.080 0.180
1.15 1.45
1.60 1.80
2.30 2.70
Ratings
250
200
625
Unit
V
mA
mA
THERMAL CHARACTERISTICS
Parameter
Total Device Dissipation FRâ5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device DissipationAlumina Substrate,(2)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Maximum Ratings
225
1.8
556
300
2.4
417
-55 ~ +150
Unit
mW
mW / °C
°C / W
mW
mW / °C
°C / W
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Symbol Min. Max.
Unit
Off Characteristics
Reverse Voltage Leakage Current
IR
-
1.0
-
100
μA
Reverse Breakdown Voltage
V(BR)
250
-
Vdc
VF1
Forward Voltage
VF2
Diode Capacitance
CD
Reverse Recovery Time
tRR
1. FR - 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
-
1000
mV
-
1250
-
5.0
pF
-
50
nS
Test Conditions
VR = 200 Vdc
VR = 200 Vdc, TJ = 150°C
IBR = 100 μAdc
IF = 100 mA
IF = 200 mA
VR = 0, f = 1MHz
IF = IR = 30 mA, RL=100Ω
01-Jun-2005 Rev. B
Page 1 of 2
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