BAS19_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Switching Diode

Elektronische Bauelemente
BAS19
Surface Mount Switching Diode
FEATURES
· Fast Switching Speed
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
· Surface Mount Package Ideally Suited for
Automatic Insertion
· For General Purpose Switching Applications
· High Conductance
V
A
L
3
Top View
1
2
G
BS
3
CATHODE
1
ANODE
3
1
2
C
D
H
K
J
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
Symbol
VR
IF
IFM(surge)
Value
120
200
500
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
BAS19 = JP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 100 Vdc,TJ = 25^OC)
(VR = 100 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
IR
V(BR)
—
0.1
—
100
µAdc
—
40
120
—
Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
—
715
—
855
mV
—
1000
—
1250
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
—
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)
trr
50
ns
1.FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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