BAS16W_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Small Signal Switching Diode

Elektronische Bauelemente
BAS16W
Small Signal Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Fast Switching Speed
z For General Purpose Switching Applications
z High Conductance
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
3
2
MARKING: A2
D
F
G
H
J
ABSOLUTE MAXIMUM RATINGS (Single diode @ T_A = 25°C)
Parameter
Symbol
Ratings
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak Forward Surge Current @=1.0μs
@=1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
P_D
R_θJA
T_J, T_STG
100
75
53
300
150
2.0
1.0
200
625
150, -65 ~ +150
REF.
A
B
C
D
E
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
REF.
F
G
H
J
Millimeter
Min. Max.
0.20 0.40
-
-
0.525 REF.
0.08 0.15
Unit
V
V
V
mA
mA
A
mW
K/W
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Symbol
Min.
Max.
Reverse Breakdown Voltage
V_(BR)R
75
-
Reverse Voltage Leakage Current
I_R
-
1
25
Forward Voltage
Diode Capacitance
V_F1
-
V_F2
-
V_F3
-
V_F4
-
C_D
-
715
855
1000
1250
2.0
Reverse Recovery Time
t_RR
-
4
Unit Test Conditions
V I_R = 10 μA
μA V_R = 75V
nA V_R = 20V
I_F = 1mA
I_F = 10mA
mV
I_F = 50mA
I_F = 150mA
pF V_R = 0, f=1MHz
nS
I_F = I_R = 10 mA,
I_RR=0.1xI_R, R_L=100Ω
15-December-2008 Rev. B
Page 1 of 2