BAS16 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Small Signal Diode

Elektronische Bauelemente
BAS16
Surface Mount Switching Diode
FEATURES
· Fast Switching Speed
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
· Surface Mount Package Ideally Suited for
Automatic Insertion
· For General Purpose Switching Applications
· High Conductance
V
3
A
L
3
Top View
1
2
G
BS
3
CATHODE
1
ANODE
MAXIMUM RATINGS
1
2
C
D
H
K
J
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
VR
75
IF
200
IFM(surge)
500
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
BAS16 = A6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
IR
—
—
—
V(BR)
75
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
—
—
—
—
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
—
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
VFR
—
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 Ω)
trr
—
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω)
QS
—
Max
1.0
50
30
—
715
855
1000
1250
2.0
1.75
6.0
45
Unit
µAdc
Vdc
mV
pF
Vdc
ns
pC
1.FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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