BAS116 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Low-leakage diode

Elektronische Bauelemente
BAS116
Voltage 0.1 A, 80 V
Surface Mount Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Low leakage current applications
z Medium speed witching times
PACKAGE DIMENSIONS
MARKING: JV
1
Base
3 ^Collector
2
Emitter
A
L
K
3
Top View
BS
1
2
V
G
D
J
C
H
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Collector Currrent
Total Power Dissipation
Junction, Storage Temperature
Symbol
V_RRM
V_RWM
V_R
I_FM
P_D
T_J, T_STG
Ratings
75
75
75
200
225
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
Symbol
V_R
V_F1
V_F2
V_F3
V_F4
I_R
C_TOT
T_RR
Min.
75
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
2
-
Max.
-
0.9
1
1.1
1.25
5
-
3
Unit
V
V
V
V
V
nA
pF
uS
Test Conditions
I_R = 100uA
I_F = 1mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
V_R = 75V
V_R = 0V, f=1MHz
I_F=I_R=10mA,I_RR=0.1×I_R , R_L=100Ω
01-June-2002 Rev. A
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