BAP64W_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Small Signal General Purpose PiN Diode

Elektronische Bauelemente
BAP64W-04 / BAP64W-05 /
BAP64W-06
Small Signal General Purpose PiN Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low diode capacitance
Low series inductance
High voltage, current controlled
RF resistor for RF attenuators and switches
RF attenuators and switches
MARKING CODE
Part Name
Marking
BAP64W-04 BAP64W-05 BAP64W-06
4K
5K
6K
Circuit

PACKAGE INFORMATION ^
Package
MPQ
SOT-23
3K

Leader Size
7 inch
SOT-23
A
L
3
Top View
CB
1
2
K
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
Parameter
Continuous Reverse Voltage
Continuous Forward Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
Symbol
VR
IF
PD
R_θJA
TJ, TSTG
Ratings
175
100
250
500
150, -55 ~ +150
Unit
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Symbol Min.
Typ.
Max.
Forward Voltage
Reverse Voltage Leakage Current
Diode Capacitance
Diode Forward Resistance¹
VF
-
-
1.1
-
-
10
IR
-
-
1
-
0.52
-
CD
-
-
0.5
-
-
0.35
-
-
40
-
-
20
rD
-
-
3.8
-
-
1.35
Charge Carrier Life Time
tL
-
1.55
-
Series Inductance
LS
-
1.4
-
Note:
1.Guaranteed on AQL basis: inspection level S4,AQL 1.0.
Unit
V
µA
pF
Ω
µS
nH
Test Conditions
IF =50mA
VR =175V
VR =20V
VR =0, f =1MHz
VR =1 V, f =1MHz
VR =20 V, f =1MHz
IF = 0.5 mA, f =100MHz
IF =1mA, f =100MHz
IF =10mA, f =100MHz
IF =100mA, f =100MHz
When switched from
IF =10mA to IR =6mA;
RL =100 Ω;
measured at IR =3mA
IF=10mA, f=100MHz
http://www.SeCoSGmbH.com/
24-Jan-2014 Rev. A
Any changes of specification will not be informed individually.
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