BAP64-05 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon PIN diode

Elektronische Bauelemente
BAP64-05
Small Signal General Purpose Pin Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Low diode capacitance
z Low diode forward resistance
z Low series inductance
z High voltage, current controlled
z RF resistor for RF attenuators and switches
z For applications up to 3 GHz
z RF attenuators and switches
PACKAGING INFORMATION
3
Weight: 0.0078 g (Approximate)
MARKING CODE
5K
12
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
Parameter
Continuous Reverse Voltage
Continuous Forward Current
Power Dissipation
Junction, Storage Temperature
Symbol
V_R
I_F
P_D
T_J, T_STG
Ratings
175
100
250
150, -65 ~ +150
Unit
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Symbol Min.
Typ.
Max.
Forward Voltage
Reverse Voltage Leakage Current
V_F
-
-
1.1
10
I_R
-
-
1
Diode Capacitance
-
0.52
-
C_D
-
0.37
-
-
0.23
0.35
-
20
40
Diode Forward Resistance
-
10
20
r_D
-
2
3.8
-
0.7
1.35
Charge Carrier Life Time
t_L
-
1.55
-
Series Inductance
L_S
-
1.4
-
Unit
V
μA
pF
Ω
μS
nH
Test Conditions
I_F = 50 mA
V_R = 175 V
V_R = 20 V
V_R = 0, f = 1 MHz
V_R = 1 V, f = 1 MHz
V_R = 20 V, f = 1 MHz
I_F = 0.5 mA, f = 100 MHz
I_F = 1 mA, f = 100 MHz
I_F = 10 mA, f = 100 MHz
I_F = 100 mA, f = 100 MHz
When switched from
I_F = 10 mA to I_R = 6 mA;
R_L = 100 Ω;
measured at I_R =3mA
http://www.SeCoSGmbH.com/
01-Jun-2005 Rev. A
Any changes of specification will not be informed individually.
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