BAP50-03 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose PIN diode

Elektronische Bauelemente
BAP50-03
Small Signal General Purpose PiN Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Low Diode Capacitance
z Low Diode Forward Resistance
PACKAGING INFORMATION
Weight: 0.0039 g (Approximate)
MARKING CODE
A81
MAXIMUM RATINGS (Single diode @ T_A = 25°C)
Parameter
Symbol
Continuous Reverse Voltage
Continuous Forward Current
Power Dissipation (T_A = 90°C)
Junction, Storage Temperature
V_R
I_F
P_D
T_J, T_STG
Ratings
50
50
200
-55 ~ +150
SOD-323
D
1
Cathode Band
H
G
2
F
C
B
A
E
J
REF.
A
B
C
D
Millimeter
Min. Max.
1.05 REF.
0.20 REF.
0.80 1.00
0.25 0.40
REF.
E
F
G
H
Millimeter
Min. Max.
0.080 0.180
1.15 1.45
1.60 1.80
2.30 2.70
Unit
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Continuous Reverse Voltage
Forward Voltage
Reverse Current
Diode Capacitance
Diode Forward Resistance
Symbol
V_R
V_F
I_R
C_D1A
C_D1B
C_D2
C_D3
r_D
Min.
50
-
-
-
-
-
-
-
-
-
Max.
-
1.1
100
0.91
1.11
0.55
0.35
40
25
5
Unit
V
V
nA
pF
Ω
Test Conditions
I_R = 10 μA
I_F = 50 mA
V_R = 50 V
V_R = 0, f = 1MHz
V_R = 0, f = 1MHz
V_R = 1 V, f = 1MHz
V_R = 5 V, f = 1MHz
I_F = 0.5 mA, f = 100 MHz
I_F = 1 mA, f = 100 MHz
I_F = 10 mA, f = 100 MHz
http://www.SeCoSGmbH.com/
01-Jun-2005 Rev. A
Any changes of specification will not be informed individually.
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