B772S Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic-Encapsulated Transistor

Elektronische Bauelemente
B772S
-3A , -40V
PNP Plastic-Encapsulated Transistor
FEATURES
Low speed switching.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
G
TO-92
H
CLASSIFICATION OF h_FE
Product-Rank B772S-R
Range
60~120
B772S-O
100~200
B772S-Y
160~320
B772S-GR
200~400
J
A
D
B
K
E
CF
1Emitter
2Collector
3Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-40
-30
-6
-3
625
200
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
-40
-
-
V IC= -100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-30
-
-
V IC= -10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-6
-
-
V IE= -100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-1
µA VCB= -40V, IE=0
Collector Cut-Off Current
ICEO
-
-
-10
µA VCE= -30V, IB=0
Emitter Cut-Off Current
IEBO
-
-
-1
µA VEB= -6V, IC=0
DC Current Gain
hFE
60
-
400
VCE= -2V, IC= -1A
Collector to Emitter Saturation Voltage VCE(sat)
-
-
-0.5
V IC= -2A, IB= -200mA
Base to Emitter Voltage
VBE(sat)
-
-
-1.5
V VCE= -2V, IC= -200mA
Transition Frequency
fT
50
80
-
MHz VCE= -5V, IC= -100mA, f=10MHz
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
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