B772C Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
B772C
-3A , -40V
PNP Plastic Encapsulated Transistor
FEATURES
 Low frequency power amplifier
 High Current
 Low Speed Switching
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-126C
Emitter
Collector
Base
CLASSIFICATION OF h_FE
Product-Rank B772C-R
Range
60~120
B772C-O
100~200
B772C-Y
160~320
B772C-GR
200~400
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
7.80 8.20
3.00 3.40
10.80 11.20
15.30 15.70
3.90 4.10
4.04 4.24
2.28 TYP.
REF.
H
J
K
L
M
N
O
Millimeter
Min. Max.
0.80 1.60
0.45 0.60
0.66 0.86
1.30 1.50
1.17 1.37
3.10 3.30
2.70 2.90
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
-40
-30
-6
-3
1.25
-55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base-emitter saturation voltage
Transition Frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
Min.
-40
-30
-6
-
-
-
60
32
-
-
50
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-1
-10
-1
400
-
-0.5
-1.5
-
Unit
V
V
V
μA
μA
μA
V
V
MHz
Test Conditions
I_C= -100μA, I_E=0
I_C= -10mA, I_B=0
I_E= -100μA, I_C=0
V_CB= -40V, I_E=0
V_CE= -30V, I_B=0
V_EB= -6V, I_C=0
V_CE= -2V, I_C= -1A
V_CE= -2V, I_C= -100mA
I_C= -2A, I_B= -200mA
I_C= -2A, I_B= -200mA
V_CE= -5V, I_C= -100mA
f=10MHz
http://www.SeCoSGmbH.com/
23-Aug-2012 Rev. B
Any changes of specification will not be informed individually.
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