B772 Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – PNP Silicon Epitaxial Planar Transistor

Elektronische Bauelemente
B772
PNP Type
Plastic Encapsulate Transistors
Features
* Low speed switching
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
MAXIMUM RATINGS* T_A=25^oC unless otherwise noted
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
-40
V
V_CEO
Collector-Emitter Voltage
-30
V
V_EBO
Emitter-Base Voltage
-6
V
I_C
Collector Current –Continuous
-3
A
P_C
Collector Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
1.25
W
150
o_C
-55-150
o_C
TO-126
7.6±0.2
2.7±0.2
1.3±0.2
4.0±0.1
10.8±0.2
O3.1± 0.1
12 3
2.2±0.1
15.5±0.2
1.27±0.1
0.76±0.1
4.58±0.1
2.29 Typ.
0.5± 0.1
1: Emitter
2: Collector
3: Base
Dimens ions in Millimeters
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)_CBO Ic=-100μA ，I_E=0
-40
Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0
-30
Emitter-base breakdown voltage
V(BR)_EBO
I_E= -100 μA，I_C=0
-6
Collector cut-off current
I_CBO
V_CB= -40 V , I_E=0
Collector cut-off current
I_CEO
V_CE=-30 V , I_B=0
Emitter cut-off current
I_EBO
V_EB=-6V , I_C=0
MAX
-1
-10
-1
DC current gain
hFE（1）
VCE= -2V, IC= -1A
60
400
UNIT
V
V
V
μA
μA
μA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V_CE(sat)
V_BE(sat)
f_T
I_C=-2A, I_B= -0.2A
I_C=-2A, I_B= -0.2A
V_CE= -5V, I_C=-0.1A
f = 10MHz
-0.5 V
-1.5 V
80
MHz
CLASSIFICATION OF hFE₍₁₎
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
http://www.SeCoSGmbH.com/
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
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