A94_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
A94
-0.2A , -400V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Excellent h_FE Linearity
CLASSIFICATION OF h_FE(1)
Product-Rank A94-A
A94-B1
Range
80~100
100~150
A94-B2
150~200
A94-C
200~300
TO-92
Collecto
3
1 Emitter
2 Base
3 Collector
2
Base
1
Emitter
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F
G
H
J
K
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
R_θJA
TJ, TSTG
-400
-400
-5
-200
625
200
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
-400
-
-
V IC= -100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO -400
-
-
V IC= -1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
µA VCB= -400V, IE=0
Collector Cut-Off Current
ICEO
-
-
-5
µA VCE= -400V, IB=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
µA VEB= -4V, IC=0
hFE (1)
80
-
300
VCE= -10V, IC= -10mA
DC Current Gain
hFE (2)
70
-
-
hFE (3)
60
-
-
VCE= -10V, IC= -1mA
VCE= -10V, IC= -100mA
hFE (4)
80
-
-
VCE= -10V, IC= -50mA
Collector to Emitter Saturation Voltage ^{VCE(sat) (1)}
-
VCE(sat) (2)
-
-
-0.2
V IC= -10mA, IB= -1mA
-
-0.3
V IC= -50mA, IB= -5mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
-0.75
V IC= -10mA, IB= -1mA
Transition Frequency
fT
50
-
-
MHz VCE= -20V, IC= -10mA, f=30MHz
http://www.SeCoSGmbH.com/
22-Dec-2012 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 1