A92_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic-Encapsulated Transistor

Elektronische Bauelemente
A92
PNP Plastic-Encapsulated Transistor
FEATURES
 High Voltage.
CLASSIFICATION OF h_{FE (2)}
Product-Rank
A92-A
Range
80~100
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
G
A92-B
A92-C
100~200
200~250
K
E
TO-92
H
J
A
D
B
CF
Emitter
Base
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current -Pulsed
Collector Power Dissipation
Junction, Storage Temperature
Thermal Resistance From Junction to Ambient
Thermal Resistance From Junction to Case
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_C
T_J, T_STG
R_θJA
R_θJC
-310
-305
-5
-200
-500
625
150, -55~150
200
83.3

Base

Emitter
Unit
V
V
V
mA
mA
mW
°C
°C / mW
°C / mW
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_{FE (1)}
h_{FE (2)}
h_{FE (3)}
V_CE(sat)
V_BE(Sat)
f_T
Min.
-310
-305
-5
-
-
60
80
60
-
-
50
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.25
-0.1
-
250
-
-0.2
-0.9
-
Unit
V
V
V
μA
μA
V
V
MHz
Test Conditions
I_C= -100μA, I_E=0
I_C= -1mA, I_B=0
I_E= -100μA, I_C=0
V_CB= -200V, I_E=0
V_EB= -5V, I_C=0
V_CE= -10V, I_C= -1mA
V_CE= -10V, I_C= -10mA
V_CE= -10V, I_C= -80mA
I_C= -20mA, I_B= -2mA
I_C= -20mA, I_B= -2mA
V_CE= -20V, I_C= -10mA, f=30MHz
http://www.SeCoSGmbH.com/
25-Dec-2014 Rev. D
Any changes of specification will not be informed individually.
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