A92_11 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic-Encapsulated Transistor

Elektronische Bauelemente
A92
-0.5A , -300V
PNP Plastic-Encapsulated Transistor
FEATURES
High Voltage.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
G
TO-92
H
CLASSIFICATION OF h_{FE (2)}
Product-Rank A92-A
A92-B1
Range
80~100 100~150
A92-B2
150~200
A92-C
200~250
J
A
D
B
K
E
CF
1Emitter
2Base
3Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
3
2
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Thermal Resistance From Junction to Ambient
Thermal Resistance From Junction to Case
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
RθJA
RθJC
-300
-300
-5
-500
625
150, -55~150
200
83.3
Unit
V
V
V
mA
mW
°C
°C / mW
°C / mW
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
-300
-
-
V IC= -100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO -300
-
-
V IC= -1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.25 µA VCB= -200V, IE=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
µA VEB= -5V, IC=0
hFE (1)
60
-
-
VCE= -10V, IC= -1mA
DC Current Gain
hFE (2)
80
-
250
VCE= -10V, IC= -10mA
hFE (3)
60
-
-
VCE= -10V, IC= -80mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
-0.2
V IC= -20mA, IB= -2mA
Base to Emitter Voltage
VBE(Sat)
-
-
-0.9
V IC= -20mA, IB= -2mA
Transition Frequency
fT
50
-
-
MHz VCE= -20V, IC= -10mA, f=30MHz
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
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