A1015_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic-Encapsulated Transistor

Elektronische Bauelemente
A1015
-0.15A , -50V
PNP Plastic-Encapsulated Transistor
FEATURES
Power Dissipation
CLASSIFICATION OF h_FE
Product-Rank A1015-O
Range
70~140
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
G
H
A1015-Y
120~240
A1015-GR
200~400
J
A
D
B
K
E
CF
1Emitter
2Collector
3Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
-50
-50
-5
-150
400
125, -55~125
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
-50
-
-
V IC= -100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-50
-
-
V IC= -0.1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
µA VCB= -50V, IE=0
Collector Cut-Off Current
ICEO
-
-
-0.1
µA VCE= -50V, IB=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
µA VEB= -5V, IC=0
DC Current Gain
hFE
70
-
400
VCE= -6V, IC= -2mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
-0.3
V IC= -100mA, IB= -10mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
-1.1
V IC= -100mA, IB= -10mA
Transition Frequency
fT
80
-
-
MHz VCE= -10V, IC= -1mA, f=30MHz
Collector Output Capacitance
Cob
-
-
7
pF VCB= -10V, IE=0, f=1MHz
Noise Figure
NF
-
-
6
dB ^{VCE= -6V, IC= -0.1mA, f=1KHz,}
RG=10K
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
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