8550SST_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
8550SST
-1.5A , -40V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 General Purpose Switching and Amplification.
CLASSIFICATION OF h_{FE (1)}
Product-Rank 8550SST-B 8550SST-C
Range
85~160
120~200
8550SST-D
160~300
TO-92
G
H
J
A
D
B
K
E
CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector


Base
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
-40
-25
-5
-1.5
1
125
150, -55~150

Emitter
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_{FE (1)}
h_{FE (2)}
V_CE(sat)
V_BE(sat)
f_T
Min
-40
-25
-5
-
-
-
85
40
-
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-0.1
-0.1
-0.1
300
-
-0.5
-1.2
-
Unit
V
V
V
μA
μA
μA
V
V
MHz
Test condition
I_C= -0.1mA, I_E=0
I_C= -0.1mA, I_B=0
I_E= -0.1mA, I_C=0
V_CB= -40V, I_E=0
V_CE= -20V, I_B=0
V_EB= -5V, I_C=0
V_CE= -1V, I_C= -100mA
V_CE= -1V, I_C= -800mA
I_C= -800mA, I_B= -80mA
I_C= -800mA, I_B= -80mA
V_CE= -10V, I_C= -50mA, f=30MHz
http://www.SeCoSGmbH.com/
18-Feb-2011 Rev. B
Any changes of specification will not be informed individually.
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