3DD13005 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

Elektronische Bauelemente
3DD13005
4A , 700V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
TO-220J
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
700
400
9
4
2
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
700
-
-
V IC=1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO 400
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
9
-
-
V IE=1mA, IC=0
Collector Cut – Off Current
ICBO
-
-
1
mA ^{VCB=700V, IE=0}
ICEO
-
-
0.1
VCE=400V, IB=0
Emitter Cut – Off Current
IEBO
-
-
0.05 mA VEB=7V, IC=0
DC Current Gain
20
-
30
hFE
5
-
-
VCE=5V, IC=1A
VCE=5V, IC=10mA
Collector to Emitter Saturation Voltage
VCE(sat)1
-
VCE(sat)2
-
-
0.3
V IC=1A, IB=0.2A
-
0.8
V IC=4A, IB=1A
Base to Emitter Saturation Voltage
VBE(sat)
-
-
1.6
V IC=2A, IB=0.5A
Transition Frequency
fT
5
-
-
MHz VCE=10V, IC=500mA, f =1MHz
Fall time
tF
-
-
0.6
µs IB1= -IB2=0.4A, IC=2A, VCC=120V
Storage time
tS
1.8
-
6.6
µs IC=0.25A
http://www.SeCoSGmbH.com/
2-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
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