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| 3DD13003B_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulated Transistor | |||
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Elektronische Bauelemente
3DD13003B
1.5A , 700V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ Power switching applications
Collector
ï«ï
ï¬ï
Base
ïªï
Emitter
TO-92
A
D
B
REF.
A
Millimeter
Min. Max.
4.40 4.70
B 4.30 4.70
C 12.70
-
D 3.30 3.81
E 0.36 0.56
E
CF
F 0.36 0.51
G
1.27 TYP.
H 1.10
-
J
2.42
2.66
K 0.36 0.76
G
H
ïªEmitter
ï«Collector
ï¬Base
J
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
700
400
9
1.5
900
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut â Off Current
Emitter Cut â Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)
fT
tS
tF
Min.
700
400
9
-
-
20
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
4
4
0.7
Max.
-
-
-
100
50
10
30
3
0.8
1
-
-
-
Unit
V
V
V
μA
μA
V
V
MHz
μs
μs
Test Condition
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=700V, IE=0
VCE=400V, IB=0
VEB=7V, IC=0
VCE=10V, IC=400mA
IC=1.5A, IB=500mA
IC=0.5A, IB=100mA
IC=0.5A, IB=100mA
VCE=10V, IC=100mA, f =1MHz
IB1= -IB2=0.2A
IC=1A
http://www.SeCoSGmbH.com/
02-Mar-2015 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2
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