3DD13002 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TRANSISTOR(NPN)

Elektronische Bauelemente
3DD13002
0.8A, 600V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
3
Base
TO-92
A
D
B
Collector
2
E
CF
G
1
Emitter
H
1Emitter
2Collector
J ^3Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
Rating
600
500
6
0.8
800
156
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector to Base Breakdown Voltage
V(BR)CBO
600
-
-
Collector to Emitter Breakdown Voltage V(BR)CEO 500
-
-
Emitter to Base Breakdown Voltage
V(BR)EBO
6
-
-
Collector Cut – Off Current
ICBO
-
-
100
ICEO
-
-
100
Emitter Cut – Off Current
IEBO
-
-
100
DC Current Gain
20
-
30
hFE
5
-
-
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.5
Base to Emitter Saturation Voltage
VBE(sat)
-
-
1.1
Transition Frequency
fT
-
5
-
Storage time
tS
-
2.5
-
Fall time
tF
-
0.5
-
Unit
Test Condition
V IC=100µA, IE=0
V IC=1mA, IB=0
V IE=100µA, IC=0
VCB=600V, IE=0
µA
VCE=500V, IB=0
µA VEB=6V, IC=0
VCE=10V, IC=200mA
VCE=10V, IC=0.25mA
V IC=200mA, IB=40mA
V IC=200mA, IB=40mA
MHz VCE=10V, IC=100mA, f =1MHz
µS IB1= -IB2=0.2A, IC=1A, VCC=100V
http://www.SeCoSGmbH.com/
27-Nov-2015 Rev. A
Any changes of specification will not be informed individually.
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