2SD669AT Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 1.5A, 180V NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
2SD669AT
1.5A, 180V
NPN Plastic Encapsulated Transistor
FEATURES
Low frequency power amplifier
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
CLASSIFICATION OF h_FE
Product-Rank
2SD669AT-B
Range
60~120
2SD669AT-C
100~200
TO-126
1Emitter
2Collector
3Base
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Collector to Base Voltage
Collector to Emitter Voltage
VCBO
VCEO
Emitter to Base Voltage
Continuous Collector Current
VEBO
IC
Collector Dissipation
Junction and Storage Temperature
PC
TJ, TSTG
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
7.40 7.80
2.50 2.90
10.60 11.00
15.30 15.70
3.70 3.90
3.90 4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.10 1.50
0.45 0.60
0.66 0.86
2.10 2.30
1.17 1.37
3.00 3.20
Rating
180
160
5
1.5
1
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector to Base Breakdown Voltage
V(BR)CBO
180
-
-
Collector to Emitter Breakdown Voltage
V(BR)CEO
160
-
-
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
Collector Cut–Off Current
ICBO
-
-
10
Emitter Cut–Off Current
IEBO
-
-
10
DC Current Gain
60
-
200
hFE
30
-
-
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
1
Base to Emitter Voltage
VBE(on)
-
-
1.5
Transition Frequency
fT
-
140
-
Collector Output Capcitance
Cob
-
14
-
Unit
Test Condition
V
V
V
µA
µA
V
V
MHz
pF
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=160V, IE=0
VEB=4V, IC=0
VCE=5V, IC=150mA
VCE=5V, IC=500mA
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
27-May-2016 Rev. A
Any changes of specification will not be informed individually.
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