2SD667A_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
2SD667A
1A , 120V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low Frequency Power Amplifier
 Complementary Pair with 2SB647A
CLASSIFICATION OF h_{FE (1)}
Product-Rank
2SD667A-B
Range
60~120
2SD667A-C
100~200
2SD667A-D
160~320
Collector


Base

Emitter
TO-92MOD
A
D
B
K
E
F
C
N
G
H
 Emitter
 Collector
 Base
M
L
J
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.50 6.50
8.00 9.00
12.70 14.50
4.50 5.30
0.35 0.65
0.30 0.51
1.50 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.70 2.05
2.70 3.20
0.85 1.15
1.60 Max
0.00 0.40
4.00 Min
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
Rating
120
100
5
1
0.9
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_{FE (1)}
h_{FE (2)}
V_CE(sat)
V_BE
f_T
C_ob
Min.
120
100
5
-
-
60
30
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
140
12
Max.
-
-
-
10
10
320
-
1
1.5
-
-
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
I_C=10μA, I_E=0
I_C=1mA, I_B=0
I_E=10μA, I_C=0
V_CB=100V, I_E=0
V_EB=4V, I_C=0
V_CE=5V, I_C=150mA
V_CE=5V, I_C=500mA
I_C=500mA, I_B=50mA
V_CE=5V, I_C=150mA
V_CE=5V, I_C=150mA
V_CB=10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
17-Sep-2013 Rev. B
Any changes of specification will not be informed individually.
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