2SD667A Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Elektronische Bauelemente
2SD667A
1A , 120V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Frequency Power Amplifier
Complementary Pair with 2SB647A
TO-92MOD
A
D
B
CLASSIFICATION OF h_{FE (1)}
Product-Rank 2SD667A-B
Range
60~120
2SD667A-C
100~200
2SD667A-D
160~320
Collector
2
3
Base
1
Emitter
K
E
F
C
N
G
H
1 Emitter
2 Collector
3 Base
M
L
J
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.50 6.50
8.00 9.00
12.70 14.50
4.50 5.30
0.35 0.65
0.30 0.51
1.50 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.70 2.05
2.70 3.20
0.85 1.15
1.60 Max
0.00 0.40
4.00 Min
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
120
100
5
1
0.9
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector to Base Breakdown Voltage
V(BR)CBO
120
-
-
Collector to Emitter Breakdown Voltage V(BR)CEO
100
-
-
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
Collector Cut-Off Current
ICBO
-
-
10
Emitter Cut-Off Current
IEBO
-
-
10
DC Current Gain
hFE (1)
60
-
320
hFE (2)
30
-
-
Collector to Emitter Saturation Voltage VCE(sat)
-
-
1
Base to Emitter Voltage
VBE
-
-
1.5
Transition Frequency
fT
-
140
-
Collector Output Capacitance
Cob
-
12
-
V
V
V
µA
µA
V
V
MHz
pF
Test Conditions
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=100V, IE=0
VEB=4V, IC=0
VCE=5V, IC=150mA
VCE=5V, IC=500mA
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
7-Oct-2011 Rev. A
Any changes of specification will not be informed individually.
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