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| 2SD601A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type | |||
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Elektronische Bauelemente
2SD601A
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen and lead free
FEATURES
z Power dissipation
PCM: 0.2 W (TAMB=25â)
z Collector current
ICM: 0.1 A
z Collector-base voltage
V(BR)CBO: 60 V
z Operating and storage junction temperature range
TJ,TSTG: -55â to +150â
1
Base
3 Collector
2
Emitter
A
L
3
K
Top View
BS
1
2
V
G
D
J
C
H
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS at TA = 25°C
PARAMETER
TEST CONDITIONS
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
Collector-Emitter Breakdown Voltage
IC = 2 mA, IB = 0
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
Collector Cut-off Current
VCB = 20V, IE = 0
Collector Cut-off Current
VEB = 10V, IC = 0
Collector-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
IC = 100mA, IB = 10mA
VCE = 10 V, IC = 2 mA
VCE = 2 V, IC = 100 mA
VCE = 10V, IC = 2mA, f = 200MHz
Collector Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
SYMBOL MIN. TYP. MAX. UNIT
V(BR)CBO
60
-
-
V
V(BR)CEO
50
-
-
V
V(BR)EBO
7
-
-
V
ICBO
-
-
0.1
μA
ICEO
-
100
μA
VCE(sat)
hFE(1)
hFE(2)
fT
-
-
0.3
V
160
-
460
90
-
-
-
150
-
MHz
COB
-
3.5
-
pF
CLASSIFICATION OF hFE(1)
Rank
Q
Range
160 - 260
Marking
ZQ
R
210 - 340
ZR
S
290 - 460
ZS
01-June-2005 Rev. A
Page 1 of 1
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