2SD2403Q Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulate Transistor

Elektronische Bauelemente
2SD2403Q
Plastic-Encapsulate Transistor
Features
RoHS Compliant Product
SOT-89
D
D1
A
• NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
• This transistor is also available in the TO-223 case with the
b1
type designation PZT2403
b
C
e
e1
Mechanical Data
Case: SOT-89 Plastic Package
Weight: approx. 0.016g
Marking Code: 156



1. BASE
2. COLLECTOR
3. EMITTER
Maximum Ratings and Thermal Characteristics
(TA = 25^OC unless otherwise noted)
Parameter
Symbol
Collector Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (pulse)
IC
Power Dissipation at TA = 25°C
Ptot
Thermal Resistance Junction to Ambiant Air
RθJA
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
0.900
1.100
Value
80
60
5.0
3
6
1.0
150 (1)
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.014
0.022
0.014
0.017
0.173
0.181
0.055
0.071
0.091
0.102
0.155
0.167
0.060TYP
0.114
0.122
0.035
0.043
Unit
V
V
V
A
W
°C/W
Junction Temperature
Tj
Storage Temperature Range
TS
Notes: Device on alumina substrate.
Electrical Characteristics (TJ = 25¡C unless otherwise noted)
Parameter
Symbol
Test Condition
150
°C
–55 to +150
°C
f = 30MHz
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
VCBO
IC = 100uA, IE = 0
80
-
-
V
Collector-Emitter Breakdown Voltage
VCEO
IC = 10mA, IB = 0
60
-
-
V
Emitter-Base Breakdown Voltage
VEBO
IE = 100uA, IC = 0
5
-
-
V
Emitter Cotoff Current
IEBO
VCE = 4V, IC = 0
-
-
100
nA
Collector Cutoff Current
Collector-emitter Saturation Voltage 1
ICBO
VCE(sat)1
VCB = 60V, IE = 0
IC = 1A, IB = 0.1A
-
-
100
nA
-
0.12
0.2
V
Collector-emitter Saturation Voltage 2
VCE(sat)2 IC = 3A, IB = 0.3A
-
0.43
0.6
V
Base-emitter Saturation Voltage
VBE(sat) IC = 1A, IB = 0.1A
-
0.9
1.25
V
Base-emitter xxx Voltage
VBE(on) IC = 1A, VCE = 2V
-
0.8
1.0
V
DC Current Gain 1
DC Current Gain 2
hFE1
VCE = 2V, IC = 50 mA
70
200
-
hFE2
VCE = 2V, IC = 500 mA
100
200
300
DC Current Gain 3
hFE3
VCE = 2V, IC = 1 A
80
170
-
DC Current Gain 4
hFE4
VCE = 2V, IC = 2 A
40
80
-
Gain-Bandwidth Product
fT
VCE = 5V, IC = 100 mA
140
175
-
MHz
f=100MHz
On-Time
Off-Time
Output Capacitance
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
ton
VCC = 10V, IC = 500 mA
-
45
-
toff
IB1 = IB2 = 50mA
-
800
-
ns
Cob
VCB = 10V, f = 2 MHz
-
-
30
pF
Any changing of specification will not be informed individual
Page 1 of 2