2SD2396 Datasheet, PDF (1/2 Pages) Rohm – Transistor, NPN

Elektronische Bauelemente
2SD2396
3A, 80V
P Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Darling connection provides high DC current gain (h_FE)
Large collector power dissipation
Low frequency and power amplifier
ITO-220J
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
Emitter to Base Voltage
VCEO
VEBO
Collector Current
IC
Collector Power Dissipation
PC
Thermal Resistance from Junction to Ambient
RθJA
Junction and Storage Temperature
TJ, TSTG
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
14.5 15.5
9.5 10.5
13.20 REF.
4.24 4.84
2.52 3.20
2.50 2.90
0.47 0.75
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
3.8 TYP.
1.30 REF.
0.3
0.9
2.54 REF.
2.70 REF.
φ 3.5 REF.
Rating
80
60
6
3
2
62.5
150, -55~150
Unit
V
V
V
A
W
°C/ W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Collector to Base Breakdown Voltage
V(BR)CBO
80
Collector to Emitter Breakdown Voltage V(BR)CEO
60
Emitter to Base Breakdown Voltage
V(BR)EBO
6
Collector Cut-Off Current
ICBO
-
Emitter Cut-Off Current
IEBO
-
DC Current Gain ¹
hFE
600
Collector to Emitter Saturation Voltage ¹
VCE(sat)
-
Base to Emitter Voltage
VBE(sat)
-
Transition Frequency
fT
-
Collector Output Capacitance
Cob
-
Notes:
1. Pulse test：Pulse width≦300µs, duty cycle≦2%.
-
-
-
-
-
-
-
100
-
100
-
1200
-
0.8
-
1.5
40
-
55
-
Unit
Test Condition
V IC=0.05mA, IE=0
V IC=1mA, IB=0
V IE=0.05mA, IC=0
µA VCB=80V, IE=0
µA VEB=6V, IC=0
VCE=4V, IC=0.5A
V IC=2A, IB=50mA
V IC=2A, IB=50mA
MHz VCE=5V, IC=0.2A, f=10MHz
pF VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
24-Aug-2016 Rev. A
Any changes of specification will not be informed individually.
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