2SD2153 Datasheet, PDF (1/2 Pages) Rohm – High gain amplifier transistor (25V, 2A)

Elektronische Bauelemente
2SD2153
2A , 30V
NPN Plastic Encapsulated Transistor
FEATURES
Small Flat Package
General Purpose Application
CLASSIFICATION OF h_FE(1)
Product-Rank 2SD2153-U
Range
560~1200
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
2SD2153-V
820~1800
MARKING
DN
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
Collector
2
1
Base
3
Emitter
SOT-89
4
A
1
B
2
C
3
E
E
C
B
F
G
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.25 2.60
1.50 1.85
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
30
Collector-Emitter Voltage
VCEO
25
Emitter-Base Voltage
VEBO
6
Collector Current-Continuous
IC
2
Pulsed Collector Current ¹
ICP
3
Collector Power Dissipation
PC
0.5
Maximum Junction to Ambient
RθJA
250
Junction & Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
V
A
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Collector-Base Breakdown Voltage
V(BR)CBO
30
-
-
V IC=50µA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
-
-
V IC=1mA, IB=0
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain¹
V(BR)EBO
ICBO
IEBO
hFE
6
-
-
-
560
-
-
V IE=50µA, IC=0
-
0.5 µA VCB=20V, IE=0
-
0.5
µA VEB=5V, IC=0
-
1800
VCE=6V, IC=500mA
Collector-Emitter Saturation voltage
VCE(sat)
-
-
0.5
V IC=1A, IB=20mA
Transition Frequency
fT
-
110
-
MHz VCE=10V,IC=10mA,f=100MHz
Collector Output Capacitance
Note:
1. Single pulse, PW=10mS
COB
-
22
-
pF VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
20-Nov-2013 Rev. A
Any changes of specification will not be informed individually.
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