2SD2150_09 Datasheet, PDF (1/2 Pages) Rohm – Low Frequency Transistor (20V, 3A)

Elektronische Bauelemente
2SD2150
3 A, 40 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Excellent Current-to-Gain Characteristics
Low Collector Saturation Voltage,
V_CE(SAT)=0.5V(Max.) for I_C / I_B=2A/0.1A
Collector
2
MARKING
CFR
CFS
1
Base
3
Emitter
SOT-89
4
A
E
B
F
G
H
J
123
C
BCE
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction & Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
40
20
6
3
500
150, -55~150
UNIT
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
*Pulse test: tP≦300µS, δ≦0.02
CLASSIFICATION OF hFE
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE*
VCE(sat) *
fT*
COB
MIN.
40
20
6
-
-
180
-
-
-
TYP.
-
-
-
-
-
-
-
290
25
MAX.
-
-
-
0.1
0.1
560
0.5
-
-
UNIT TEST CONDITIONS
V
V
V
µA
µA
V
MHz
pF
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=30V, IE=0
VEB=5 V, IC=0
VCE=2V, IC= 100mA
IC=2A, IB= 100mA
VCE=2V, IC=-500mA, f=100MHz
VCB=10V, IE=0, f=1MHz
Rank
Range
Marking
R
180-390
CFR
S
270-560
CFS
http://www.SeCoSGmbH.com/
6-Nov-2009 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2