2SD2142_11 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente
2SD2142
0.3A , 40V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Darlington connection for a high h_FE.
High input impedance.
MARKING
R1M
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
40
32
12
300
200
625
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
40
-
-
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
32
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
12
-
-
V IE=100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.1
µA VCB=30V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.1
µA VEB=12V, IC=0
DC Current Gain
hFE
5000
-
-
VCE=3V, IC=100mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
1.4
V IC=200mA, IB=0.2mA
Transition Frequency
fT
-
200
-
MHz VCE=5V, IC=10mA, f=100MHz
Collector Output Capacitance
Cob
-
2.5
-
pF VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
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