2SD2118_11 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – 5A , 50V NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
2SD2118
5A , 50V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low V_CE(sat). V_CE(sat) = 0.25V(Typ.) (I_C/I_B = 4A / 0.1A)
Excellent DC Current Gain Characteristics
D-Pack (TO-252)
CLASSIFICATION OF h_FE
Product-Rank 2SD2118-Q
Range
120~270
2SD2118-R
180~390
A
B
C
D
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
Collector
2
1
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction and Storage Temperature Range
VCBO
VCEO
VEBO
IC
PC
TJ ,TSTG
50
20
6
5
1
150 , -55~150
GE
K
HF
N
O
P
M
J
Millimeter
Millimeter
REF. _{Min. Max.} REF. _{Min. Max.}
A 6.35 6.8
J
2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8
7.5 O
0
0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.25
H 0.64 1.20
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max.
Collector-base breakdown voltage
V(BR)CBO
50
-
-
Collector-emitter breakdown voltage
V(BR)CEO
20
-
-
Emitter-base breakdown voltage
V(BR)EBO
6
-
-
Collector cut-off current
ICBO
-
-
0.5
Emitter cut-off current
IEBO
-
-
0.5
DC current gain
hFE
120
-
390
Collector-emitter saturation voltage
VCE(sat)
-
-
1
Transition frequency
fT
-
150
-
Collector Output Capacitance
COB
-
30
-
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
VCE=2V, IC=500mA
IC=4A, IB=100mA
VCE=6V, IC=50mA, f=100MHz
VCB=20V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
18-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 1