2SD2118 Datasheet, PDF (1/3 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Elektronische Bauelemente
2SD2118
NPN Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
6. 50Ć0. 15
5. 30Ć0. 10
C
D-Pack
0. 51Ć0. 05
2. 30Ć0. 10
Low Collector-to-Emitter Voltage (Typ. 0.25 V)
Excellent DC Current Gain Characteristics
0. 51Ć0. 10 ^{1. 20}
0Ć0. 10
5
0. 80Ć0. 10
5
5
2. 30Ć0. 10
BC
0. 60Ć0. 10
2. 30Ć0. 10
E
0 Ć9
0. 51
MAXIMUM RATINGS* (T_A=25^o_{C unless otherwise specified)}
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
5
A
Collector Dissipation
PC
1
W
Junction Temperature
Tj
- _55~+150
°C
Storage Temperature
TSTG
- 55~+150
°C
ELECTRICAL CHARACTERISTICS (Tamb=25^OCunless otherwise specified)
Parameter
Symbol Min Typ. Max Unit. Test Conditions
Collector-Base Breakdown Voltage
BVCBO
50
-
-
V IC=50µA, IE=0
Collector-Emitter Breakdown Voltage
BVCEO
20
-
-
V IC=1mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO
6
-
-
V IE=50µA, IC=0
Collector-Base Cutoff Current
ICBO
-
-
0.5 µA VCB=40V, IE=0
Emitter-Base Cutoff Current
IEBO
-
-
0.5 µA VEB=5V, IC=0
Collector Saturation Voltage
VCE(sat)
-
0.25
1
V IC=4A, IB=100mA
DC Current Gain
hFE
120
-
390
VCE=2V, IC=500mA
Gain-Bandwidth Product
fT
-
150
-
MHz VCE=6V, IC=50mA, f=100MHz
Output Capacitance
Cob
-
30
-
pF VCB=20V, IE=0, f=1MHz
CLASSIFICATION OF hFE
Rank
Range
Q
120-270
R
180-390
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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