2SD2114_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente
2SD2114
0.5A , 25V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
 High DC Current Gain.
 High Emitter-Base Voltage. V_EBO=12V (Min.)
CLASSIFICATION OF h_FE
Product-Rank 2SD2114-V
Range
820~1800
Marking
BBV
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
D
F
G
H
J
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10
2.55
1.20 1.40
0.89 1.15
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09
0.18
0.45
0.60
0.08 0.177
0.6 REF.
0.89
1.02
Collector

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
25
20
12
500
250
150, -55~150

Base

Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
On Resistance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
R_(on)
Min.
25
20
12
-
-
820
-
-
-
-
Typ.
-
-
-
-
-
-
-
350
8
0.8
Max.
-
-
-
0.5
0.5
1800
0.4
-
-
-
Unit
V
V
V
μA
μA
V
MHz
pF
Ω
Test Conditions
I_C=10μA, I_E=0
I_C=1mA, I_B=0
I_E=10μA, I_C=0
V_CB=20V, I_E=0
V_EB=10V, I_C=0
V_CE=3V, I_C=10mA
I_C=500mA, I_B=20mA
V_CE=10V, I_C=50mA, f=100MHz
V_CB=10V, I_E=0, f=1MHz
V_in=0.1V(rms), I_B=1mA, f=1KH_z
http://www.SeCoSGmbH.com/
27-Nov-2012 Rev. C
Any changes of specification will not be informed individually.
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