2SD2114_11 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente
2SD2114
0.5A , 25V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
High DC Current Gain.
High Emitter-Base Voltage. V_EBO=12V (Min.)
CLASSIFICATION OF h_FE
Product-Rank 2SD2114-V 2SD2114-W
Range
820~1800 1200~2700
Marking
BBV
BBW
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
D
F
G
H
J
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
25
20
12
500
250
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
25
-
-
V IC=10µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
20
-
-
V IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
12
-
-
V IE=10µA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.5
µA VCB=20V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.5
µA VEB=10V, IC=0
DC Current Gain
hFE
820
-
2700
VCE=3V, IC=10mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
0.4
V IC=500mA, IB=20mA
Transition Frequency
fT
-
350
-
MHz VCE=10V, IC=50mA, f=100MHz
Collector Output Capacitance
Cob
-
8
-
pF VCB=10V, IE=0, f=1MHz
On Resistance
R(on)
-
0.8
-
Ω Vin=0.1V(rms), IB=1mA, f=1KHz
http://www.SeCoSGmbH.com/
24-Feb-2011 Rev. B
Any changes of specification will not be informed individually.
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