2SD2114 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
2SD2114
0.5 A, 25 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
z High DC current gain :h_FE = 1200(Typ)
z High emitter-base voltage. V_EBO =12V (Min.)
z Low V_{CE (sat)}. V_{CE (sat)} = 0.18V (Typ.) (I_C/I_B=500mA / 20mA)
PACKAGE DIMENSIONS
1
Base
3 ^Collector
2
Emitter
A
L
K
3
Top View
BS
1
2
V
G
D
J
C
H
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pc
T_J, T_STG
Ratings
25
20
12
500
250
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
I_CBO
I_EBO
*h_FE1
V_CE(sat)
fT
C_OB
R_(ON)
Min.
25
20
12
-
-
820
-
-
-
-
Typ.
-
-
-
-
-
-
-
350
8
0.8
Max.
-
-
-
0.5
0.5
2700
0.4
-
-
-
CLASSIFICATION OF h_FE1
Rank
V
Range
820 - 1800
Marking
BBV
W
1200 - 2700
BBW
Unit
V
V
V
uA
uA
V
MHz
pF
Ω
Test Conditions
I_C=10uA
I_C=1mA
I_E=10uA
V_CB=20V
V_EB=10V
V_CE=3V, I_C=10mA
I_C=500mA, I_B=20mA
V_CE=10V, I_C=50mA, f=100MHz
V_CB=10V, I_E=0, f=1MHz
V_IN=0.1V(rms),I_B=1mA, f=1KHZ
01-June-2005 Rev. A
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