2SD2098 Datasheet, PDF (1/3 Pages) Rohm – Low VCE(sat) Transistor(Strobe flash)

Elektronische Bauelemente
Description
The 2SD2098 is an epitaxial planar
type NPN silicon transistor.
2SD2098
NPN Silicon
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-89
Features
* Excellent DC Current Gain Characteristics
* Low Saturation Voltage, Typically VCE(SAT)=0.25V
At IC/IB=4A/0.1A
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at TA=25^oC
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
Collector Current (Pulse)* ¹
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
*1: Single pulse, PW=10ms
*2: When mounted on a 40*40*0.7mm ceramic board
Value
50
20
6
5
10
0.5 (2.0*² )
-55~+150
Units
V
V
V
A
A
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Symbol Min Typ. Max
Collector-Base Breakdown Voltage
BVCBO
50
-
-
Collector-Emitter Breakdown Voltage
BVCEO
20
-
-
Emitter-Base Breakdown Voltage
BVEBO
6
-
-
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ICBO
-
-
0.5
IEBO
-
-
0.5
Collector Saturation Voltage
*VCE(sat)
-
0.25 1
DC Current Gain
Gain-Bandwidth Product
*hFE
120
-
390
fT
-
150
-
Output Capacitance
Cob
-
30
-
* Measured under pulse condition.Pulse width 300µs, Duty Cycle 2%
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
I C=50 µA,IE=0
IC=1mA,IB=0
I E=50 _µA,IC=0
VCB=4 0V,IE=0
VEB=5V,I_C=0
IC=4A,IB=0.1 A
VCE= 2 V, IC=0.5 A
VCE= 6 V, IC=50mA,f=100MHz
VCB=20V, f=1MHz,IE=0
Classification of hFE
Rank
Range
Q
120~270
R
180~390
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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