2SD2061 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-220F Plastic-Encapsulate Transistors

Elektronische Bauelemente
2SD2061
3A, 80V
P Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low saturation voltage
Excellent DC current gain characteristic
TO-220J
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
Emitter to Base Voltage
VCEO
VEBO
Continuous Collector Current
Collector Power Dissipation
Junction and Storage Temperature
IC
PC
TJ, TSTG
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
9.57 10.57
3.54 4.14
2.54 2.94
11.86 13.26
0.97 1.57
0.51 1.11
12.7 13.8
2.540 TYP.
REF.
I
J
K
L
M
N
Q
Millimeter
Min. Max.
4.68 5.48
2.95 3.96
4.27 4.87
1.07 1.47
8.0
10.0
2.03 2.92
0.30 0.65
Rating
80
60
5
3
2
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Collector to Base Breakdown Voltage
V(BR)CBO
80
-
-
Collector to Emitter Breakdown Voltage V(BR)CEO
60
-
-
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
-
IEBO
-
-
10
-
10
DC Current Gain
hFE
100
-
320
Collector to Emitter Saturation Voltage VCE(sat)
-
-
1
Base to Emitter Saturation Voltage
VBE(sat)
-
-
1.5
Transition Frequency
fT
-
8
-
Collector Output Capacitance
Cob
-
70
-
Unit
Test Condition
V IC=0.05mA, IE=0
V IC=1mA, IB=0
V IE=0.05mA, IC=0
µA VCB=60V, IE=0
µA VEB=4V, IC=0
VCE=5V, IC=0.5A
V IC=2A, IB=200mA
V IC=2A, IB=200mA
MHz VCE=5V, IC=0.5A, f=5MHz
pF VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
01-Sep-2016 Rev. A
Any changes of specification will not be informed individually.
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