2SD1994A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

Elektronische Bauelemente
2SD1994A
NPN
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
z Low collector-emitter saturation voltage VCE(sat)
z Allowing supply with the radial taping
3
Base
Collector
2
1
Emitter
TO-92
G
H
J
A
D
B
K
E
CF
1Emitter
2Collector
3Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T_a = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current
Total Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
60
50
5
1
1
+150, -55 ~ +150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_a = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector - Base Breakdown Voltage
Collector - Emitter Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cut - Off Current
Emitter Cut - Off Current
DC Current Gain
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V_(BR)CBO
60
V_(BR)CEO
50
V_(BR)EBO
5
I_CBO
-
I_EBO
-
h_FE(1)
85
h_FE(2)
50
V_CE(sat)
-
V_BE(sat)
-
f_T
-
Cob
-
-
-
-
-
-
-
-
0.1
-
0.1
-
340
-
-
-
0.4
-
1.2
200
-
-
20
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
IC = 10 μA, IE = 0
IC = 2 mA, IB = 0
IE = 10 μA, IC = 0
VCB = 20V, IE = 0
VEB = 5V, IC = 0
VCE = 10V, IC = 500 mA
VCE = 5V, IC = 1 A
IC = 500mA, IB = 50 mA
IC = 500mA, IB = 50 mA
VCE = 10V, IB = 50 mA, f = 200MHz
VCB = 10V,IE = 0, f = 1MHz
CLASSIFICATION OF h_FE(1)
Rank
Range
Q
85 - 170
R
120 - 240
S
170 - 340
http://www.SeCoSGmbH.com/
01-December-2008 Rev. B
Any changes of specification will not be informed individually.
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