2SD1949 Datasheet, PDF (1/2 Pages) Rohm – Medium Power Transistor (50V, 0.5A)

Elektronische Bauelemente
2SD1949
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
FEATURES
A
* High current.(IC=5A)
L
* Low saturation voltage, typically
3
Top View
BS
VCE(sat)=0.1V at IC / IB=150mA / 15mA ¹
2
V
G
COLLECTOR
3
C
1
BASE
2
EMITTER
D
H
K
MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
J
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
Value
50
50
5
500
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
CLASSIFICATION OF h_FE
Rank
Range
Marking
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
I_C= 100µA , I_E=0
I_C=1mA , I_B=0
I_E= 100µA, I_C=0
V_CB= 30 V, I_E=0
V_EB=4V, I_C=0
V_CE=3V, I_C=10mA
I_C= 150mA, I_B=15mA
V_CE=5V, I_C=20mA
f=100 MHz
V_CB=10V, I_E=0,f=1 MHz
Q
120-270
YQ
50
50
5
0.5
0.5
120
390
0.4
250
6.5
R
180-390
YR
UNIT
V
V
V
µA
µA
V
MHz
pF
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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