2SD1898 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor (80V, 1A)

Elektronische Bauelemente
2SD1898
NPN Silicon
Epitaxial Planar Transistor
RoHS Compliant Product
Description
The 2SD1898 is designed for switching applications.
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCEO
80
V
Emitter to Base Voltage
VEBO
5.0
V
IC
1
A
Collector Current
ICP (Single pulse Pw=20ms)
2
A
Total Power Dissipation
PD
500
mW
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
f_T
Cob
Min.
100
80
5
-
-
-
82
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
100
25
Max.
-
-
-
1
1
400
390
-
-
Classification Of hFE
Rank
P
hFE
82-180
Q
120-270
Unit
V
V
V
uA
uA
mV
MHZ
pF
Test Conditions
IC=50uA
IC=1mA
IE=50uA
VCB=80V
VEB=4V
IC=500mA, IB=20mA
VCE=3V, IC=500mA
VCE=10V,IC=50mA,f=100MHZ
VCB=10V,IE=0, f=1MHz
R
180-390
http://www.SeCoSGmbH.com
08-May-2007 Rev. A
Any changing of specification will not be informed individual
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