2SD1819A Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Elektronische Bauelemente
2SD1819A
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
FEATURES
A
z High foward current transfer ratio hFE.
L
z Low collector to emitter saturation voltage VCE(sat).
z Complementary to 2SB1218A
3
Top View
1
2
BS
COLLECTOR
3
V
G
1
BASE
2
EMITTER
C
D
H
K
J
MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
60
V_CEO
Collector-Emitter Voltage
50
V_EBO
Emitter-Base Voltage
7
I_C
Collector Current -Continuous
100
P_C
Collector Dissipation
150
T_J
Junction Temperature
150
T_stg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
Units
V
V
V
mA
mW
℃
℃
TYP MAX UNIT
Collector-base breakdown voltage
V_(BR)CBO I_C =10μA, I_E=0
60
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V_(BR)CEO I_C =2mA, I_B=0
V_(BR)EBO I_E=10μA, I_C=0
I_CBO
V_CB=20V, I_E=0
50
V
7
V
0.1 μA
Base cut-off current
I_CEO
V_CE=10V, I_B=0
100 μA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
I_EBO
V_EB=7V, I_C=0
h_FE(1) V_CE=10V, I_C=2mA
h_FE(2) V_CE=2V, I_C=100mA
V_CE(sat) I_C=100mA, I_B=10mA
f_T
V_CB=10V, I_C=2mA, f=200MHz
0.1 μA
160
460
90
0.3 V
150
MHz
Collector output capacitance
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
http://www.SeCoSGmbH.com
01-Jun-2007 Rev. A
C_ob
Q
160-260
ZQ
V_CB=10V, I_E=0, f=1MHz
R
210-340
ZR
3.5
pF
S
290-460
ZS
Any changing of specification will not be informed individual
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