2SD1816 Datasheet, PDF (1/3 Pages) Unisonic Technologies – HIGH CURRENT SWITCHIG APPLICATIONS

Elektronische Bauelemente
2SD1816
4A , 120V
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Collector-to-Emitter Saturation Voltage
Excllent Linearity of hFE
High fT
Fast Switching Time
TO-251
A
B
C
D
MARKING CODE
1816
= Date Code
Collector
2
1
Base
GE
K
H
F
M
J
P
3
Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.35 6.80
4.90 5.50
2.15 2.40
0.43 0.90
6.50 7.50
7.20 9.65
REF.
G
H
J
K
M
P
Millimeter
Min. Max.
5.40 6.25
0.85 1.50
2.30
0.60 1.05
0.50 0.90
0.43 0.62
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
120
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
6
V
Collector Current (DC)
IC
4
A
Collector Current (Pulse)¹
IC
8
A
Collector Power Dissipation
PC
1
W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-40 ~ 150
℃
NOTE:
1. Duty=1/2, Pw=20ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-base breakdown voltage
V(BR)CBO
120
-
-
V IC=10µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
100
-
-
V IC=1mA, IB=0, RB=∞
Emitter-base breakdown voltage
V(BR)EBO
6
-
-
V IE=10µA, IC=0
Collector cut-off current
ICBO
-
-
1
µA VCB=100V, IE=0
Emitter cut-off current
IEBO
-
-
1
µA VEB=4V, IC=0
DC current gain¹
Collector-emitter saturation voltage¹
Base -emitter saturation voltage¹
hFE
VCE(sat)
VBE(sat)
140
-
280
40
-
-
-
0.15
0.4
-
0.9
1.2
VCE=5V, IC=500mA
VCE=5V, IC=3A
V IC=2A, IB=200mA
V IC=2A, IB=200mA
Transition frequency
fT
-
180
-
MHz VCE=10V, IC=500mA
Collector Output Capacitance
Turn-on time
Storage time
COB
-
40
-
pF VCB=10V, IE=0, f=1MHz
ton
-
100
-
tS
-
900
-
nS See test circuit
Fall time
tf
-
50
-
NOTE:
1. Measured under pulse condition. Pulse width≦300µs, Duty Cycle≦2%
http://www.SeCoSGmbH.com/
21-Jan-2015 Rev. A
Any changes of specification will not be informed individually.
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