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| 2SD1815_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors | |||
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Elektronische Bauelemente
2SD1815
3A , 120V
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ Low Collector-to-Emitter Saturation Voltage
ï¬ Excllent Linearity of hFE
ï¬ High fT
ï¬ Fast Switching Time
TO-251
CLASSIFICATION OF hFE
Product-Rank 2SD1815-Q
Range
70~140
2SD1815-R
100~200
2SD1815-S
140~280
Collector
ï«ï
ïªï
Base
ï¬ï
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
120
100
6
3
1
150
-55 ~ 150
A
B
C
D
GE
K
F
H
REF.
A
B
C
D
E
F
M
J
Millimeter
Min. Max.
6.35 6.80
4.90 5.50
2.15 2.40
0.43 0.90
6.50 7.50
7.20 9.65
REF.
G
H
J
K
M
P
P
Millimeter
Min. Max.
5.40 6.25
0.85 1.50
2.30
0.60 1.05
0.50 0.90
0.43 0.62
Unit
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
Collector Output Capacitance
Turn-on time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
COB
ton
tS
tf
Min.
120
100
6
-
-
70
40
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
180
25
100
900
50
Max.
-
-
-
1
1
280
-
0.4
1.2
-
-
-
-
-
Unit
V
V
V
μA
μA
V
V
MHz
pF
nS
Test Conditions
IC=10μA, IE=0
IC=1mA, IB=0
IE=10μA, IC=0
VCB=100V, IE=0
VEB=4V, IC=0
VCE=5V, IC=500mA
VCE=5V, IC=2A
IC=1.5A, IB=150mA
IC=1.5A, IB=150mA
VCE=10V, IC=500mA
VCB=10V, IE=0, f=1MHz
VCC=50V, IC=1.5A,
IB1= -IB2= -0.15A
http://www.SeCoSGmbH.com/
25-Feb-2014 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2
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