2SD1781_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
2SD1781
0.8A, 40V
NPN Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Very low V_CE(sat).V_CE(sat) < 0.4 V (Typ.)
(I_C /I_B = 500mA / 50mA)
 Complements to 2SB1197
CLASSIFICATION OF h_FE
Product-Rank 2SD1781-Q
Range
120 ~ 270
Marking
AFQ
2SD1781-R
180 ~ 390
AFR
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
Collector


Emitter

Base
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.00
2.25 2.55
1.20 1.40
0.90 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
0.5 REF.
0.95 TYP.
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction and Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
Ratings
40
32
5
0.8
200
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Parameter
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector–Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
Min.
40
32
5
-
-
120
-
-
-
Typ.
-
-
-
-
-
-
-
150
10
Max.
-
-
-
0.5
0.5
390
0.4
-
-
Unit
V
V
V
A
A
V
MHz
pF
Test Conditions
I_C = 50A, I_E = 0
I_C = 1mA, I_B = 0
I_E = 50A, I_C = 0
V_CB = 20V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 100mA, V_CE = 3V
I_C = 500mA, I_B = 50mA
V_CE = 5V, I_C = 50mA, f = 100MHz
V_CB = 10V, I_E = 0, f = 1.0MHz
http://www.SeCoSGmbH.com/
30-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
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