2SD1781K Datasheet, PDF (1/2 Pages) Rohm – Medium Power Transistor (32V, 0.8A)

Elektronische Bauelemente
2SD1781K
NPN Silicon
Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Very low V_CE(sat).V_CE(sat) < 0.4 V (Typ.)
(I_C /I_B = 500mA / 50mA)
Complements to 2SB1197K
Collector
3
2
Base
MARKING
AF‡
‡ = hFE ranking
1
Emitter
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.00
2.25 2.55
1.20 1.40
0.90 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
0.5 REF.
0.95 TYP.
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Device Dissipation
Junction and Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
Ratings
40
32
5
0.8
200
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Parameter
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector–Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_OB
Min.
40
32
5
-
120
-
-
-
Typ.
-
-
-
-
-
-
150
10
Max.
-
-
-
0.5
0.5
390
0.4
-
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
I_C = 50μA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 50μA, I_C = 0
V_CB = 20V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 100mA, V_CE = 3.0V
I_C = 500mA, I_B = 50mA
V_CE = 5V, I_C = 50mA, f = 100MHz
V_CB = 10V, I_E = 0, f = 1.0MHz
CLASSIFICATION OF h_FE
Rank
Range
Marking
Q
120 – 270
AFQ
R
180-390
AFR
http://www.SeCoSGmbH.com/
01-June-2002 Rev. A
Any changes of specification will not be informed individually.
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