2SD1767 Datasheet, PDF (1/1 Pages) Rohm – Medium power transistor (80V, 0.7A)

Elektronische Bauelemente
2SD1767
0.7A , 80V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Breakdown Voltage and Current
Excellent DC Current Gain Linearity
Complementary to 2SB1189
CLASSIFICATION OF h_FE
Product-Rank 2SD1767-P
Range
82~180
Marking
DCP
2SD1767-Q
120~270
DCQ
2SD1767-R
180~390
DCR
PACKAGE INFORMATION
Package
MPQ
Leader Size
1
SOT-89
1K
7 inch
Base
SOT-89
4
A
1
B
2
C
3
E
E
C
Collector
2
3
Emitter
B
F
G
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.25 2.60
1.50 1.85
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
80
Collector-Emitter Voltage
VCEO
80
Emitter-Base Voltage
VEBO
5
Collector Current-Continuous
IC
700
Collector Power Dissipation
PC
500
Maximum Junction to Ambient
RθJA
250
Junction & Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Collector-Base Breakdown Voltage
V(BR)CBO
80
-
-
V IC=50µA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
80
-
-
V IC=2mA, IB=0
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V(BR)EBO
5
ICBO
-
IEBO
--
-
-
V IE=50µA, IC=0
-
0.5
µA VCB=50V, IE=0
-
0.5
µA VEB=4V, IC=0
DC Current Gain
hFE
82
-
390
VCE=3V, IC= 100mA
Collector-Emitter Saturation voltage
VCE(sat)
-
-
0.4
V IC=500mA, IB= 50mA
Transition Frequency
Collector Output Capacitance
fT
-
120
-
MHz ^VCE^=10V,IC^{=50mA,f=100MH}
COB
-
10
-
pF Vz CB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
10-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
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