2SD1760 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor 50V, 3A

Elektronische Bauelemente
2SD1760
3A , 60V
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low V_CE(sat). V_CE(sat) = 0.5V(Typ.) (I_C/I_B = 2A / 0.2A)
 Complements the 2SB1184
D-Pack (TO-252)
CLASSIFICATION OF h_FE
Product-Rank 2SD1760-P 2SD1760-Q
Range
82~180
120~270
2SD1760-R
180~390
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13’ inch
Collector


Base

Emitter
A
B
C
D
GE
K
HF
N
O
P
M
J
Millimeter
Millimeter
REF. _{Min. Max.} REF. _{Min. Max.}
A 6.4
6.8
J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9
1.6
E 6.8
7.3 O
0
0.15
F 2.40
3.0
P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
60
50
5
3
1.5
150
-55 ~ 150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max. Unit
Collector-base breakdown voltage
V_(BR)CBO
60
-
-
V
Collector-emitter breakdown voltage
V_(BR)CEO
50
-
-
V
Emitter-base breakdown voltage
V_(BR)EBO
5
-
-
V
Collector cut-off current
I_CBO
-
-
1
μA
Emitter cut-off current
I_EBO
-
-
1
μA
DC current gain
h_FE
82
-
390
Collector-emitter saturation voltage
V_CE(sat)
-
-
1
V
Transition frequency
f_T
-
90
-
MHz
Collector Output Capacitance
C_OB
-
40
-
pF
Test Conditions
I_C=50μA, I_E=0
I_C=1mA, I_B=0
I_E=50μA, I_C=0
V_CB=40V, I_E=0
V_EB=4V, I_C=0
V_CE=3V, I_C=500mA
I_C=2A, I_B=200mA
V_CE=5V, I_C=500mA, f=30MHz
V_CB=10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
28-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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