2SD1664_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
2SD1664
NPN Silicon
General Purpose Transistor
Features
R oH S C om pliant P roduct
D
SOT-89
D1
A
Power dissipation
PCM : 0.5 W (Tamb= 25^oC)
Collector current
ICM : 1 A
Collector-base voltage
V(BR)CBO : 40 V
Operating & Storage junction Temperature
Tj, Tstg : -55^OC~ +150^OC
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
b1
b
e
e1
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
0.900
1.100
C
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.014
0.022
0.014
0.017
0.173
0.181
0.055
0.071
0.091
0.102
0.155
0.167
0.060TYP
0.114
0.122
0.035
0.043
Electrical Characteristics( Tamb=25^OC unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN
Collector-base breakdown voltage
V_(BR)CBO
Ic= 50­AˈI_E=0
40
Collector-emitter breakdown voltage V(BR)CEO Ic= 1mAˈI_B=0
32
Emitter-base breakdown voltage
V_(BR)EBO
I_E= 50­AˈI_C=0
5
Collector cut-off current
I_CBO
V_CB= 20 V, I_E=0
Emitter cut-off current
I_EBO
V_EB= 4V, I_C=0
DC current gain
h_FE
V_CE= 3V, I_C= 0.1A
82
Collector-emitter saturation voltage V_CE(sat) I_C= _500mA, I_B= 50mA
Transition frequency
V_CE= 5V , I_C= 50mA
f_T
f=1MHz
Output Capacitance
V_CB= 10V, I_E= 0
C_ob
f=1MHz
TYP MAX
0.5
0.5
390
0.4
150
15
UNIT
V
V
V
­A
­A
V
MHz
pF
Classification of hFE
Rank
Range
Marking
P
82-180
DAP
Q
120-270
DAQ
R
180-390
DAR
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3